| PART |
Description |
Maker |
| GT40M301 E001924 |
N CHANNEL TMOS TYPE(HIGH POWER SWITHCING APPLICATIONS)
From old datasheet system
HIGH POWER SWITCHING APPLICATIONS
|
TOSHIBA[Toshiba Semiconductor]
|
| QM300HA-24 |
300 A, 3 CHANNEL, NPN, Si, POWER TRANSISTOR
HIGH POWER SWITCHING USE INSULATED TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| RJM0603JSC RJM0603JSC-15 |
Silicon N/P Channel Power MOS FET (6 in 1 Type) High Speed Power Switching
|
Renesas Electronics Corporation
|
| 2SK153006 |
N CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATION)
|
Toshiba Semiconductor
|
| MP4411 |
Power MOS FET Module Silicon N Channel MOS Type (L2-pi-MOSV 4 in 1) High Power, High Speed Switching Applications For Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver
|
TOSHIBA
|
| GT20D101 E001910 |
From old datasheet system
N CHANNEL TYPE (HIGH POWER AMPLIFIER APPLICATION)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SK246706 2SK2467 |
Silicon N Channel MOS Type High-Power Amplifier Application
|
Toshiba Semiconductor
|
| GT60M302 E001943 |
From old datasheet system
N CHANNEL MOS TYPE (HIGH POWER SWITCHING APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| SML20W65 SML20B56 |
HIGH POWER TERMINATION 56 A, 200 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
TT electronics Semelab, Ltd.
Seme LAB
|
| SSM5P05FU |
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
|
Toshiba Semiconductor
|
| QM100DY-24 QM100DY-24K |
100 A, 2 CHANNEL, NPN, Si, POWER TRANSISTOR
MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
